1. Su, X., Gong, D., Chen, X., Gao, B., Nie, Y., Gong, M., Peng, Y., Zhang, X. & Xiang, G.. Robust Ga2O3 Memristor with Sharp Stable Negative Differential Resistance for Energy-Efficient Reliable Analog Resistive Switching and Artificial Synapse Applications. ACS Nano, in press, DOI:10.1021/acsnano.5c15821 (2025).
2. Liu, Y., Lan, M., Sun, S., Li, L., Zhang, X., Chen, J., & Xiang, G.. Two-dimensional Osmium Tetrafluoride with Non-collinear Ferromagnetism. Applied Physics Letters 127, 223101 (2025) .
3. Li, D., He, W., Shi, J., Nie, Y., Peng, Y., Zhang, X., & Xiang, G.. Curie–Weiss Type Magnetic Field Tuning of Resistive Switching and Artificial Synapse Behaviors in Semiconductor Memristor. Advanced Functional Materials, e13638, (2025).
4. Chen, X., Zhang, X., He, W., Li, Y., Lu, J., Yang, D.,Li, D., Lei, L.,Peng,Y.& Xiang, G.. Lattice Dynamics and Phonon Dispersion of the van der Waals Layered Ferromagnet Fe3GaTe2. Nano Letters 25, 4353 (2025).
5. Chen, X., Luo, Q. Y., Guo, P. J., Zhou, H. J., Hu, Q. C., Wu, H. P.,Shen, X.W., Cui, R. Y., Dong, L., Wei, T.X.,Xiao, Y.H., Li, D., Lei,L., Zhang,X.,Wang, J. F. & Xiang, G.. Quantum Sensing of Room‐Temperature Ferromagnetism in 2D Van der Waals Fe3GaTe2 Using Divacancy Spins in SiC. Advanced Functional Materials 35, 2413529 (2025).
6. Luo, J., Zhang, X., Lan, M., & Xiang, G.. Half-metal Mn2GeI2 Monolayer with High Curie Temperature and Large Perpendicular Magnetic Anisotropy. Applied Physics Letters 124, 192405 (2024).
7. Dai, X., Zhang, X., Gong, D., & Xiang, G.. Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two‐Level System of Mn Dopants in a-Gallium Oxide-based Memristor. Advanced Functional Materials 33, 2304749 (2023).
8. Feng, Y., Zhang, X., Zhao, G., & Xiang, G.. A Skyrmion Diode Based on Skyrmion Hall Effect. IEEE Transactions on Electron Devices 69, 1293 (2022).
9. Ren, H., Zhang, L., & Xiang, G.. Web buckle-mediated Room-temperature Ferromagnetism in Strained MoS2 Thin Films. Applied Physics Letters 116, 012401 (2020).
10. Wang, H., Sun, S., Lu, J., Xu, J., Lv, X., Peng, Y.,Zhang, X., Wang, Y. & Xiang, G.. High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films. Advanced Functional Materials 30, 2002513 (2020).